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dc.contributor.authorPiñero, Jose Carlos
dc.contributor.authorAraújo Gay, Daniel
dc.contributor.authorTraoré, A
dc.contributor.authorChicot, Gauthier
dc.contributor.authorMaréchal, A
dc.contributor.authorMuret, P
dc.contributor.authorAlegre, Maria de la Paz
dc.contributor.authorVillar, Maria del Pilar
dc.contributor.authorPernot, J
dc.contributor.otherCiencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánicaen_US
dc.date.accessioned2015-05-26T10:01:31Z
dc.date.available2015-05-26T10:01:31Z
dc.date.issued2014-06-23T00:00:00Z
dc.identifier.issn1862-6319
dc.identifier.urihttp://hdl.handle.net/10498/17373
dc.description.abstractMetal and oxide distribution in diamond metal–oxide– semiconductor (MOS) structures are characterized using several transmission electron microscopy (TEM) modes at nanometric scale. To understand their electrical behavior, oxygen distribution using electron energy loss spectroscopy (EELS) through the layer structure, high-resolution electron microscopy (HREM), and annular dark field (ADF) observations are reported. Oxide thickness variations, as well as oxygen content variations have been identified and characterized at an atomic resolution. The latter allows to understand the related electrical behavior as, for example, leakages or shortcuts.en_US
dc.formatapplication/pdf
dc.language.isoengen_US
dc.rightsinfo:eu-repo/semantics/openAccess
dc.sourcePhysica Status Solidi (A) Applications and Materials Science 2014 - Vol.211(10), pp. 2367-2371en_US
dc.subjectdiamonden_US
dc.subjectoxide characterizationen_US
dc.subjectpower deviceen_US
dc.subjectschottkyen_US
dc.subjectTEMen_US
dc.titleMetal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavioren_US
dc.typeinfo:eu-repo/semantics/articleen_US
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.description.physDesc6 pages
dc.identifier.doi10.1002/pssa.201431178


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