Non-volatile tuning of normally-on and off states of deep depletion ZrO2/O-terminated high voltage diamond MOSFET

Abstract

Based on the stability of the deep depletion regime in diamond and the outstanding properties of this promising material for its use in power devices, p-channel deep depletion metal oxide semiconductor field effect transistors were fabricated on a (001) Ib nitrogen-doped high pressure high temperature diamond substrate. Taking advantage of the new concept of the non-volatile diamond-based photo switch, it is demonstrated that it is possible to tune the normally-on and normally-off states of the transistor by configuring the pn-junction space charge region. The devices under study was designed following an interdigital-like and a circular-like architectures presenting low threshold voltages (between 3 V and −3 V), an on/off ratio of 107 and a critical electric field numerically assessed of 9 MV.cm−1 at room temperature. This new degree of freedom opens the route for diamond based power electronics.