Influence of the crosstalk on the intensity of HAADF-STEM images of quaternary semiconductor materials

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URI: http://hdl.handle.net/10498/35069

DOI: 10.1111/jmi.12763

ISSN: 1365-2818

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Author/s
Baladés Ruiz, NuriaAuthority UCA; Herrera, Miriam; Sales Lérida, DavidAuthority UCA; Guerrero, MP; Guerrero Vázquez, ElisaAuthority UCA; Galindo Riaño, Pedro LuisAuthority UCA; Molina Rubio, Sergio IgnacioAuthority UCA
Date
2019
Department
Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica; Ingeniería Industrial e Ingeniería Civil; Ingeniería Informática
Source
Journal of Microscopy, Vol. 273, Núm. 1, 2019, pp. 81-88
Abstract
The influence of the neighbouring atomic-columns in determining the composition at atomic column scale of quaternary semiconductor compounds, using simulated HAADF-STEM images is evaluated. The InAlAsSb alloy, a promising material in the photovoltaic field, is considered. We find that the so called ‘crosstalk’ effect plays an important role for the aimed compositional determination. The intensity transfer is larger from neighbouring atomic columns with higher average Z, and towards atomic columns with smaller Z. Our results show that in order to obtain precise information on the column composition, the HAADF-STEM intensities of both columns need to be taken into account simultaneously.
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