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HAADF-STEM analysis of the composition distribution in InAlAsSb/InGaAs/InP layers for solar cells applications

dc.contributor.authorBaladés, Nuria
dc.contributor.authorHerrera, Miriam
dc.contributor.authorSales, D.L
dc.contributor.authorFernández, Natalia
dc.contributor.authorDelgado, FJ
dc.contributor.authorHernández-Maldonado, D
dc.contributor.authorRamasse, Q
dc.contributor.authorGonzález, M
dc.contributor.authorTomasulo, S
dc.contributor.authorAbell, J
dc.contributor.authorWalters, R
dc.contributor.authorMolina, SI
dc.contributor.otherIngeniería Industrial e Ingeniería Civiles_ES
dc.contributor.otherCiencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
dc.date.accessioned2025-01-30T15:42:37Z
dc.date.available2025-01-30T15:42:37Z
dc.date.issued2016
dc.identifier.issn1435-8115
dc.identifier.issn1431-9276
dc.identifier.urihttp://hdl.handle.net/10498/35176
dc.description.abstractIn this communication, we analyse by transmission electron microscopy (TEM) the structural properties of an InAlAsSb/InGaAs/InP heterostructures grown by Molecular Beam Epitaxy (MBE). The photoluminescence emission of the samples grown at different temperatures shows the presence of subbandgap tail of states, suggesting the presence of compositional alloy variations in the quaternary InAlAsSb material.es_ES
dc.formatapplication/pdfes_ES
dc.language.isoenges_ES
dc.sourceMicroscopy and Microanalysis, 2016, nº22 pp.30-31es_ES
dc.titleHAADF-STEM analysis of the composition distribution in InAlAsSb/InGaAs/InP layers for solar cells applicationses_ES
dc.typeannotationes_ES
dc.rights.accessRightsopen accesses_ES
dc.identifier.doi10.1017/S1431927616000349
dc.type.hasVersionNAes_ES


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