RT journal article
T1 Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial delta-doped  diamond layers
A1 Araújo Gay, Daniel
A1 Alegre Salguero, María de la Paz
A1 Piñero Charlo, José Carlos
A1 Fiori, Alexandre
A1 Bustarret, Etienne
A1 Jomard, F
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 HAADF
K1 delta doped
K1 boron cocentration
AB To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 1020 cm-3 were quantitatively derived down to nanometer resolution from the signal dependence on thickness andboron content. Experimental boron local doping profiles measured on diamond p-/p++/p- multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.
SN 0003-6951
YR 2013
FD 2013-07-23T00:00:00Z
LK http://hdl.handle.net/10498/17158
UL http://hdl.handle.net/10498/17158
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 21-sep-2026