RT info:eu-repo/semantics/article
T1 Critical boron-doping levels for generation of dislocations in synthetic diamond
A1 Alegre Salguero, María de la Paz
A1 Araújo Gay, Daniel
A1 Fiori, Alexandre
A1 Piñero Charlo, José Carlos
A1 Lloret Vieira, Fernando Manuel
A1 Villar Castro, María del Pilar
A1 Achatz, Philippe
A1 Chicot, Gauthier
A1 Bustarret, Etienne
A1 Jomard, F
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 Defect
K1 synthetic diamond
K1 CTEM
K1 boron doped diamond
AB Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH4/H2 molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 X 10 20 at/cm3 range in the <111> direction and at 3.2 X 1021 at/cm3 for the <001> one. Strain related effects induced by the doping are shown not tobe responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.
SN 0003-6951
YR 2014
FD 2014-10-28T00:00:00Z
LK http://hdl.handle.net/10498/17159
UL http://hdl.handle.net/10498/17159
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 24-sep-2021