RT info:eu-repo/semantics/article T1 Critical boron-doping levels for generation of dislocations in synthetic diamond A1 Alegre, Maria de la Paz A1 Araújo Gay, Daniel A1 Fiori, Alexandre A1 Pinero, Jose Carlos A1 Lloret, Fernando A1 Villar Castro, María del Pilar A1 Achatz, Philippe A1 Chicot, Gauthier A1 Bustarret, Etienne A1 Jomard, F A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica K1 Defect K1 synthetic diamond K1 CTEM K1 boron doped diamond AB Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH4/H2 molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 X 10 20 at/cm3 range in the <111> direction and at 3.2 X 1021 at/cm3 for the <001> one. Strain related effects induced by the doping are shown not tobe responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism. SN 0003-6951 YR 2014 FD 2014-10-28T00:00:00Z LK http://hdl.handle.net/10498/17159 UL http://hdl.handle.net/10498/17159 LA eng DS Repositorio Institucional de la Universidad de Cádiz RD 25-feb-2021