RT journal article
T1 Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures
A1 Chicot, Gauthier
A1 Fiori, A
A1 Volpe, Pierre Nicola
A1 Tran Thi, T.N.
A1 Gerbedoen, J.C.
A1 Bousquet, J
A1 Alegre Salguero, María de la Paz
A1 Piñero Charlo, José Carlos
A1 Araújo Gay, Daniel
A1 Jomard, F
A1 Soltani, A
A1 Morse, J
A1 Härtwing, J
A1 Tranchant, N
A1 Mer-Calfati, C
A1 Arnault, J. C.
A1 Eon, D.
A1 Omnés, F
A1 Pernot, Julien
A1 Bustarret, Etienne
A1 Delahaye, J
A1 Grenet, T
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 delta
K1 doped diamond
K1 electronic properties
AB Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called deltadoped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four proberesistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6K<T<450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.660.8 cm2/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.
SN 0021-8979
YR 2014
FD 2014-08-22T00:00:00Z
LK http://hdl.handle.net/10498/17160
UL http://hdl.handle.net/10498/17160
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 21-sep-2026