RT journal article
T1 Local boron doping quantification in homoepitaxial diamond structures
A1 Araújo Gay, Daniel
A1 Achatz, Philippe
A1 El Bouayadi, R
A1 García, A.J.
A1 Alegre Salguero, María de la Paz
A1 Villar, Maria del Pilar
A1 Jomard, F
A1 Bustarret, E
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 Diamond
K1 TEM
K1 homoepitaxy
K1 HAADF
K1 Boron doping
AB The capability of transmission electronmicroscopy (TEM) using the high angle annular dark fieldmode (HAADF,also labelled Z-contrast) to quantify boron concentration, in the high doping range between 1019cm−3 and 1021cm−3, is demonstrated. Thanks to the large relative variation of atomic number Z between carbon and boron, doping concentration maps and profiles are obtained with a nanometer-scale resolution. A novel numerical simulation procedure allows the boron concentration quantification and demonstrates the high sensitivity andspatial resolution of the technique.
SN 0925-9635
YR 2010
FD 2010-03-01T00:00:00Z
LK http://hdl.handle.net/10498/17161
UL http://hdl.handle.net/10498/17161
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 11-nov-2026