RT journal article
T1 Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis
A1 Araújo Gay, Daniel
A1 Alegre Salguero, María de la Paz
A1 García, A.J.
A1 Navas, J.
A1 Villar Castro, María del Pilar
A1 Bustarret, Etienne
A1 Volpe, Pierre Nicola
A1 Omnés, Franck
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 CL
K1 Cross section analysis
K1 TEM
K1 doping
K1 Diamond
AB To assess diamond-based semiconducting devices, a reduction of point defect levels and an accurate control of doping are required as well as the control of layer thickness. Among the analyses required to improve such parameters, cross sectional studies should take importance in the near future. The present contribution showshow FIB (focused ion beam) preparations followed by electron microscopy related techniques as TEM or CL allowed to performanalysis versus depth in the layer, doping and point defect levels. Three samples grown along the sameweek in the same machinewith identical growth conditions but on different substrates (CVD-IIIa (110)oriented, CVD-optical grade (100) oriented and a HPHT-Ib (100) oriented) are studied. Even though A-band is observed by CL, no dislocation is observed by CTEM. Point defect type and level are shown to substantially change with respect to the substrate type as well as the boron doping levels that vary within an order of magnitude. H3 present in the epilayer grown on HPHT type of substrate is replaced by T1 and NE3 point defects for epilayers grown on the CVD type one. An increase of excitonic transitions through LO phonons is also shown to take place near the surface while only TO ones are detected deeper in the epilayer. Such results highlight the importance of choosing the correct substrate.
SN 0925-9635
YR 2011
FD 2011-01-01T00:00:00Z
LK http://hdl.handle.net/10498/17163
UL http://hdl.handle.net/10498/17163
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 11-nov-2026