RT journal article
T1 Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers
A1 Fernández Lorenzo, Concepción
A1 Araújo Gay, Daniel
A1 Martín, J.
A1 Alcántara, J
A1 Navas, J.
A1 Villar, Maria del Pilar
A1 Alegre Salguero, María de la Paz
A1 Volpe, Pierre Nicola
A1 Omnés, Franck
A1 Bustarret, Etienne
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 Diamond
K1 Boron doping
K1 CL
K1 FTIR
AB A homoepitaxial boron-doped diamond single layer is investigated by means of Fourier transformed infrared spectroscopy (FTIR) and cathodoluminescence (CL). Both techniques are shown to be complementary. μ-FTIR mapping allows to determine the location of active boron while CL allows discernability between passivationand compensation. Hydrogen incorporation during chemical vapour deposition (CVD) growth is revealed to passivate boron acceptors. The obtained results highlight that plasma etching can induce a dissociation of B–H centres.
SN 0925-9635
YR 2010
FD 2010-02-25T00:00:00Z
LK http://hdl.handle.net/10498/17164
UL http://hdl.handle.net/10498/17164
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 08-nov-2026