RT info:eu-repo/semantics/bookPart
T1 TEM study of homoepitaxial diamond layers scheduled for high power devices: FIB method of sample preparation
A1 Alegre, Maria de la Paz
A1 Bustarret, Etienne
A1 Ben Fernández, Teresa
A1 Villar, Maria del Pilar
A1 Araújo Gay, Daniel
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 Homoepitaxial diamond
K1 electrons microscopy
K1 FIB-dual beam
AB Homoepitaxial diamond structure observation by transmission electron microscopy (TEM) is still a very hard job due to the difficulty in preparing electron transparent samples for the further observation. The present contribution details the experimental operations with their respective conditions step by step. Finally high resolution TEM (HREM) observations of a CVD grown epilayer on a unnintentionally doped HPHT (001) oriented substrate are present to show the high quality of the sample preparation method.
YR 2009
FD 2009-01-01T00:00:00Z
LK http://hdl.handle.net/10498/17165
UL http://hdl.handle.net/10498/17165
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 08-mar-2021