RT journal article
T1 Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers
A1 Araújo Gay, Daniel
A1 Alegre Salguero, María de la Paz
A1 García, Antonio
A1 Villar, Maria del Pilar
A1 Bustarret, Etienne
A1 Achatz, Philippe
A1 Volpe, Pierre Nicola
A1 Omnés, Franck
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 homoepitaxial diamond, boron-doped, TEM, HAADF and CL
K1 homoepitaxial diamond
K1 boron-doped
K1 TEM
K1 HAADF and CL
AB In some diamond-based semiconducting devices, large variations of doping level are required over short distances. Tools to determine doping level and defects distribution should therefore be developed. The present contribution shows the capabilities of electron microscopy in this field. Focused ion beam (FIB-dual  beam) cross section preparations allowed evaluating doping level in highly boron doped sample with doping transition down to some nm by diffraction contrast mode of transmission electron microscopy (CTEM) and by high angle annular dark field mode of scanning transmission electron microscopy (HAADF-STEM). The sensibility of the latter is around 1019cm-3 and, thus, cathodoluminescence (CL)is required for lower doping levels. Cross sectional analysis on FIB prepared lamella allowed to separate the epilayer behaviour from that of the substrate. Mid-gap centers involving boron, hydrogen and, for some peaks, also nitrogen are revealed. sp2 bonds are also present in the grown epilayer. These transitions make difficult theobservation of excitonic recombinations in the cross section configuration.
SN 1610-1642
YR 2011
FD 2011-02-08T00:00:00Z
LK http://hdl.handle.net/10498/17372
UL http://hdl.handle.net/10498/17372
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 22-sep-2026