RT journal article
T1 Metal–oxide–diamond interface
investigation by TEM: Toward MOS and
Schottky power device behavior
A1 Piñero Charlo, José Carlos
A1 Araújo Gay, Daniel
A1 Traoré, A
A1 Chicot, Gauthier
A1 Maréchal, A
A1 Muret, P
A1 Alegre Salguero, María de la Paz
A1 Villar, Maria del Pilar
A1 Pernot, Julien
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 diamond
K1 oxide characterization
K1 power device
K1 schottky
K1 TEM
AB Metal and oxide distribution in diamond metal–oxide–semiconductor (MOS) structures are characterized usingseveral transmission electron microscopy (TEM) modes atnanometric scale. To understand their electrical behavior,oxygen distribution using electron energy loss spectroscopy(EELS) through the layer structure, high-resolution electronmicroscopy (HREM), and annular dark field (ADF) observationsare reported. Oxide thickness variations, as well as oxygencontent variations have been identified and characterized at anatomic resolution. The latter allows to understand the relatedelectrical behavior as, for example, leakages or shortcuts.
SN 1862-6319
YR 2014
FD 2014-06-23T00:00:00Z
LK http://hdl.handle.net/10498/17373
UL http://hdl.handle.net/10498/17373
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 11-nov-2026