RT journal article
T1 Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cells
A1 Tizno, Ofogh
A1 Marshall, Andrew R. J.
A1 Fernandez Delgado, Natalia
A1 Herrera Collado, Miriam
A1 Molina Rubio, Sergio Ignacio
A1 Hayne, Manus
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
AB Whilst the different forms of conventional (charge-based) memories are well suited to their individualroles in computers and other electronic devices, flaws in their properties mean that intensive researchinto alternative, or emerging, memories continues. In particular, the goal of simultaneously achievingthe contradictory requirements of non-volatility and fast, low-voltage (low-energy) switchinghas proved challenging. Here, we report an oxide-free, floating-gate memory cell based on III-Vsemiconductor heterostructures with a junctionless channel and non-destructive read of the storeddata. Non-volatile data retention of at least 104 s in combination with switching at ≤2.6 V is achievedby use of the extraordinary 2.1 eV conduction band offsets of InAs/AlSb and a triple-barrier resonanttunnelling structure. The combination of low-voltage operation and small capacitance implies intrinsicswitching energy per unit area that is 100 and 1000 times smaller than dynamic random accessmemory and Flash respectively. The device may thus be considered as a new emerging memory withconsiderable potential.
PB NATURE PUBLISHING GROUP
SN 2045-2322
YR 2019
FD 2019-06
LK http://hdl.handle.net/10498/21554
UL http://hdl.handle.net/10498/21554
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 15-nov-2026