RT journal article
T1 Selectively boron doped homoepitaxial diamond growth for power device applications
A1 Lloret Vieira, Fernando Manuel
A1 Eon, D.
A1 Donatini, F.
A1 Araújo Gay, Daniel
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Física Aplicada
AB Diamond lateral growth is a powerful technique for the design and fabrication of diamond-based power electronic devices. Growth orientation affects the diamond deposition in terms of growth rate, surface roughness, and impurity incorporation. It has been shown that the finally grown surface of a patterned substrate can be predesigned based on the growth conditions. Thus, simultaneous growth along different surface orientations yields regions with different properties. In line with this, the incorporation of boron in a microwave plasma enhanced chemical vapor deposition laterally deposited epilayer over a mesa patterned {100}-oriented diamond substrate was studied by cathodoluminescence. It was observed that laterally oriented facets were highly boron doped in contrast to the {100}-oriented surfaces, which did not show any bound exciton emission, related to the doping. This study shows that, by designing the initial pattern and tuning the conditions, it is possible to drive a selective incorporation of boron into the grown layer.
PB AMER INST PHYSICS
SN 0003-6951
YR 2021
FD 2021-01-11
LK http://hdl.handle.net/10498/24510
UL http://hdl.handle.net/10498/24510
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 13-nov-2026