RT journal article
T1 Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications
A1 Núñez-Cascajero, Arántzazu
A1 Naranjo, Fernando B.
A1 Mata Fernández, María de la
A1 Molina Rubio, Sergio Ignacio
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 III-nitrides
K1 AlInN
K1 AlN buffer
K1 RF sputtering
K1 TEM
AB Compact Al0.37In0.63N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN layer is grown on a 15 nm-thick AlN buffer. The layer grown on bare silicon exhibits a thin amorphous interfacial layer between the substrate and the AlInN, which is not present in the layer grown on the AlN buffer layer. A reduction of the density of defects is also observed in the layer grown on the AlN buffer.
PB MDPI
SN 1996-1944
YR 2021
FD 2021-05
LK http://hdl.handle.net/10498/24997
UL http://hdl.handle.net/10498/24997
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 15-nov-2026