RT journal article
T1 Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects
A1 Kierdaszuk, Jakub
A1 Kaźmierczak, Piotr
A1 Grzonka, Justyna María
A1 Krajewska, Aleksandra
A1 Przewłoka, Aleksandra
A1 Kaszub, Wawrzyniec
A1 Zytkiewicz, Zbigniew R.
A1 Sobanska, Marta
A1 Kamińska, Maria
A1 Wysmołek, Andrzej
A1 Drabińska, Aneta
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 carrier concentration
K1 gallium nitride
K1 graphene
K1 nanowires
K1 Raman spectroscopy
K1 scattering on defects
K1 strain
AB We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results indicate that different density and height of nanowires impact graphene properties such as roughness, strain, and carrier concentration as well as density and type of induced defects. Tracing the manifestation of those interactions is important for the application of novel heterostructures. A detailed analysis of Raman spectra of graphene deposited on different nanowire substrates shows that bigger differences in nanowires height increase graphene strain, while a higher number of nanowires in contact with graphene locally reduces the strain. Moreover, the value of graphene carrier concentration is found to be correlated with the density of nano wires in contact with graphene. The lowest concentration of defects is observed for graphene deposited on nanowires with the lowest density. The contact between graphene and densely arranged nanowires leads to a large density of vacancies. On the other hand, grain boundaries are the main type of defects in graphene on rarely distributed nanowires. Our results also show modification of graphene carrier concentration and strain by different types of defects present in graphene. Therefore, the nanowire substrate is promising not only for strain and carrier concentration engineering but also for defect engineering.
PB BEILSTEIN-INSTITUT
SN 2190-4286
YR 2021
FD 2021-06-22
LK http://hdl.handle.net/10498/25467
UL http://hdl.handle.net/10498/25467
LA eng
NO This work was partially supported by the Ministry of Science and Higher Education in 2015-2019 as a research grant "Diamond Grant" (n degrees. DI2014 015744). The GaN nanowires were grown within the Polish National Science Centre (grants n degrees. UMO-2016/21/N/ST3/03381 and 2016/23/B/ST7/03745). This work was supported by the Research Foundation Flanders (FWO) under grant n degrees. EOS 30467715.
DS Repositorio Institucional de la Universidad de Cádiz
RD 14-nov-2026