RT journal article
T1 Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range
A1 Helal, Hicham
A1 Benamara, Zineb
A1 Wederni, Mouhamed Amine
A1 Mourad, Sabrine
A1 Khirouni, Kamel
A1 Monier, Guillaume
A1 Robert-Goumet, Christine
A1 Rabehi, Abdelaziz
A1 Kacha, Arslane Hatem
A1 Bakkali, Hicham
A1 Cervera Gontard, Lionel
A1 Domínguez de la Vega, Manuel
A2 Física de la Materia Condensada
K1 Conduction mechanisms
K1 Schottky diode
K1 GaN
K1 n-GaAs
K1 Nitridation
K1 Barrier height
K1 I-V-T
AB Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterizedover a wide temperature range. As a result, the reverse current Iinv increments from 1 x 10^-7 Aat 80 K to about 1 x 10^-5 A at 420 K. The ideality factor n shows low values, decreasing from 2 at80 K to 1.01 at 420 K. The barrier height q b grows abnormally from 0.46 eV at 80 K to 0.83 eV at420 K. The tunnel mechanism TFE effect is responsible for the qfi_b behavior. The series resistanceRs is very low, decreasing from 13.80 W at 80 K to 4.26 W at 420 K. These good results are due to thegood quality of the interface treated by the nitridation process. However, the disadvantage of thenitridation treatment is the fact that the GaN thin layer causes an inhomogeneous barrier height.
PB MDPI
SN 1996-1944
YR 2021
FD 2021-10-09
LK http://hdl.handle.net/10498/25830
UL http://hdl.handle.net/10498/25830
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 21-sep-2026