RT journal article
T1 Transport mechanism in O-terminated diamond/ZrO2 based MOSCAPs
A1 Soto Portillo, Beatriz
A1 Cañas, J.
A1 Villar Castro, María del Pilar
A1 Araújo Gay, Daniel
A1 Pernot, Julien
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 Diamond
K1 Oxygen termination
K1 Zirconia
K1 Capacitors
AB Metal Oxide Semiconductor capacitors were fabricated using p-type O-terminated (001) diamond and zirconiumdioxide deposited by atomic layer deposition at low temperature (100 ◦C). X-ray diffraction and transmissionelectron microscopy evidence monoclinic structure and polycrystalline nature of the oxide layer. I-V, C–V andC–F experiments have been performed in a large frequency range, i.e. from 1 Hz to 1 MHz, in order to analysethe electrical properties of the metal/dielectric/diamond stack. The presence of charges in the oxide andinterface states induces a flat-band voltage shift in the C–V curve and a strong Fermi level pinning effect. Aleakage current mechanism considering the correlation of the microstructural characterization and the electricalresponse is proposed.
PB ELSEVIER
SN 0925-9635
YR 2022
FD 2022-01
LK http://hdl.handle.net/10498/25883
UL http://hdl.handle.net/10498/25883
LA eng
NO The authors would like to thank the Ministerio de Economia y Competitividad (MINECO) of the Spanish Government for funding under Grant No. TEC2017-86347-C2-1-R (DiamMOS project) and from ESP2017 91820 and PID2019 -110219RB-100, PID2020-117201RB-C21 projects. The authors would also thank the Junta de Andalucía (Comunidad Autónoma of Andalusia Government, Spain) for funding from FEDER-UCA18-106470, FEDER-UCA18-107851 and P20-00946 projects and as well as the grants for stays in research centres from the Promotion Programme of Research Activity of the University of Cadiz. In addition the authors acknowledge the expertise and support on different techniques allowing device fabrication (laser lithography and ALD) and characterization (XRD) of: Bruno Fernandez (Nanofab, Inst. Néel, CNRS, Grenoble), Laurent Cagnon and Eric Mossang (Inst. Néel, CNRS, Grenoble). The authors also thank to IMEYMAT (University of Cádiz) for the TEM facilities used in the microstructural characterization.
DS Repositorio Institucional de la Universidad de Cádiz
RD 21-sep-2026