RT journal article
T1 Texture in ITO films deposited at oblique incidence by ion beam sputtering
A1 Lacroix, Bertrand
A1 Paumier, F.
A1 Santos Izquierdo-Bueno, Antonio Jesús
A1 Maudet, F.
A1 Girardeau, T.
A1 Dupeyrat, C.
A1 García Roja, Rafael
A1 Morales Sánchez, Francisco Miguel
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 Indium tin oxide
K1 Ion beam sputtering
K1 Oblique angle deposition
K1 Thin films
K1 Texture
K1 Morphology
AB Texture of crystalline In2O3:Sn (ITO) thin films prepared by combining ion beam sputtering (IBS) at room temperature and oblique angle deposition (OAD) has been studied depending on the vapor incidence on Si substrates (alpha, ranging from 50 degrees to 85 degrees) and the ions used to sputter the target (argon or xenon accelerated at 1.2 keV). Films obtained using Xe ions show an unusual evolution depending on the deposition angle alpha, with the development of a dual biaxial (1 1 1) off-axis texture for alpha <= 70 degrees, and a switching in the preferred out-of-plane orientation from [1 1 1] to [0 0 1] for alpha > 70 degrees that leads to a biaxial (0 0 1) texture at highest deposition angles. These behaviors are well described by mechanisms involving a maximization of the direct capture of the adatoms on {1 1 1} planes, which can however be hindered when mobilities are exalted such as in the case of Ar deposition. The tuning of adatoms mobilities through the IBS process mixed with the control of the deposition angle offered by the OAD geometry appears as an efficient route to achieve an upgraded texture engineering in nanostructured ITO thin films.
PB ELSEVIER
SN 0169-4332
YR 2022
FD 2022-12
LK http://hdl.handle.net/10498/27556
UL http://hdl.handle.net/10498/27556
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 15-nov-2026