RT journal article
T1 Monolithic integration of a 10 mu m cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform
A1 Kwan, D. C. M.
A1 Kesaria, M.
A1 Jiménez Ríos, Juan Jesús
A1 Srivastava, V.
A1 Delmas, M.
A1 Liang, B. L.
A1 Morales Sánchez, Francisco Miguel
A1 Huffaker, D. L.
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
AB At room temperature, a 10 mu m cut-off wavelength coincides with an infrared spectral window and the peak emission of blackbody objects. We report a 10 mu m cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial misfit (IMF) array between the GaSb buffer layer and GaAs substrate. Transmission electron microscopy and energy-dispersive X-ray spectroscopy revealed that the heterostructure on GaSb-on-GaAs is epitaxial, single-crystalline but with a reduced material homogeneity, extended lattice defects and atomic segregation/intermixing in comparison to that on the GaSb substrate. Strain-induced degradation of the material quality is observed by temperature-dependent current-voltage measurements. The T2SL with the IMF array appears as a potentially effective route to mitigate the impact of the lattice mismatch once its fabrication is fully optimized for these systems, but additional strain compensating measures can enable a low cost, scalable manufacturing of focal plane arrays (FPA) for thermal imaging cameras for spectroscopy, dynamic scene projection, thermometry, and remote gas sensing.
PB NATURE PORTFOLIO
SN 2045-2322
YR 2022
FD 2022-07
LK http://hdl.handle.net/10498/27583
UL http://hdl.handle.net/10498/27583
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 15-nov-2026