RT journal article
T1 Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate
A1 Ruiz Marín, Nazaret
A1 Fernández de los Reyes, Daniel
A1 Luna, Esperanza
A1 Stanojevic, Lazar
A1 Ben Fernández, Teresa
A1 Flores Gallegos, Sara
A1 Braza Blanco, María Verónica
A1 Gallego-Carro, A.
A1 Barcena González, Guillermo
A1 Yañez Escolano, Andrés
A1 Ulloa, José María
A1 González Robledo, David
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Ingeniería Informática
K1 InAs QDs
K1 AlAs capping
K1 STEM
K1 growth rate control
AB The use of thin AlA capping layers (CLs) on InAs quantum dots (QDs) has recently received considerable attention due to improved photovoltaic performance in QD solar cells. However, there is little data on the structural changes that occur during capping and their relation to different growth conditions. In this work, we studied the effect of AlA capping growth rate (CGR) on the structural features of InAs QDs in terms of shape, size, density, and average content. As will be shown, there are notable differences in the characteristics of the QDs upon changing CGR. The Al distribution analysis in the CL around the QDs was revealed to be the key. On the one hand, for the lowest CGR, Al has a homogeneous distribution over the entire surface, but there is a large thickening of the CL on the sides of the QD. As a result, the QDs are lower, lenticular in shape, but richer in In. On the other hand, for the higher CGRs, Al accumulates preferentially around the QD but with a more uniform thickness, resulting in taller QDs, which progressively adopt a truncated pyramidal shape. Surprisingly, intermediate CGRs do not improve either of these behaviors, resulting in less enriched QDs.
PB MDPI
SN 2079-4991
YR 2022
FD 2022-07
LK http://hdl.handle.net/10498/27919
UL http://hdl.handle.net/10498/27919
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 08-nov-2026