RT journal article
T1 Non-volatile tuning of normally-on and off states of deep depletion ZrO2/O-terminated high voltage diamond MOSFET
A1 Soto Portillo, Beatriz
A1 Couret, M.
A1 Cañas Fernández, Jesús
A1 Castelan, A.
A1 Rouger, N.
A1 Araújo Gay, Daniel
A1 Villar Castro, María del Pilar
A1 Pernot, J.
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 D3MOSFET
K1 Critical electric field
K1 p-Channel
K1 N-doping
K1 Non-volatile photo switch
K1 Threshold voltage control
K1 O-terminated diamond
K1 ZrO2
AB Based on the stability of the deep depletion regime in diamond and the outstanding properties of this promising material for its use in power devices, p-channel deep depletion metal oxide semiconductor field effect transistors were fabricated on a (001) Ib nitrogen-doped high pressure high temperature diamond substrate. Taking advantage of the new concept of the non-volatile diamond-based photo switch, it is demonstrated that it is possible to tune the normally-on and normally-off states of the transistor by configuring the pn-junction space charge region. The devices under study was designed following an interdigital-like and a circular-like architectures presenting low threshold voltages (between 3 V and −3 V), an on/off ratio of 107 and a critical electric field numerically assessed of 9 MV.cm−1 at room temperature. This new degree of freedom opens the route for diamond based power electronics.
PB Elsevier
SN 0925-9635
YR 2023
FD 2023-02-24
LK http://hdl.handle.net/10498/29431
UL http://hdl.handle.net/10498/29431
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 21-sep-2026