RT journal article
T1 Low temperature growth of nanocrystalline diamond: Insight thermal property
A1 Millán Barba, Josué
A1 Taylor, A.
A1 Bakkali, H.
A1 Alcántara Puerto, Rodrigo
A1 Lloret Vieira, Fernando Manuel
A1 Domínguez de la Vega, Manuel
A1 Mortet, V.
A1 Gutiérrez Peinado, Marina
A1 Araújo Gay, Daniel
A1 Guzmán de Villoria, R.
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Física de la Materia Condensada
A2 Química Física
K1 Nanocrystalline diamond
K1 High-power devices
K1 Highest temperature
K1 Low temperature growth
K1 Microscopy atomic force
AB One of the limitations of materials for high-power devices and structural coatings applications is heat dissipation. Diamond is a suitable material for heat distributiondue to its high thermal conductivity. Nevertheless, it is usually grown at high temperature (800–1200 ◦C), which limits its use as a coating for substrates vulnerable todegradation at high temperatures. In this work, it is studied the effect of the distance between the plasma source and substrate on the growth of nanocrystallinediamond layers on silicon substrates at low temperature (<450 ◦C) by microwave linear antenna plasma enhanced chemical vapour deposition (MW-LA-PECVD) inpulse mode. The nanocrystalline diamond films have been analysed by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. Finally, the superficial thermal conductivity of the diamond layers was determined by scanning thermal microscopy-AFM (SThM-AFM).
PB Elsevier
SN 0925-9635
YR 2023
FD 2023-06-01
LK http://hdl.handle.net/10498/29436
UL http://hdl.handle.net/10498/29436
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 10-nov-2026