RT journal article
T1 Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices
A1 Alshahrani, Dhafer
A1 Kesaria, Manoj
A1 Jiménez Ríos, Juan Jesús
A1 Kwan, Dominic
A1 Srivastava, Vibha
A1 Delmas, Marie
A1 Morales Sánchez, Francisco Miguel
A1 Liang, Baolai
A1 Huffaker, Diana
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 atomic intermixing
K1 band structure simulation
K1 InAs/GaSb
K1 InSb-like interface
K1 photoluminescence
K1 segregation
K1 transmission electron microscopy
K1 type-II superlattice
AB Incorporating an intentional strain compensating InSb interface (IF) layer in InAs/GaSb type-II superlattices (T2SLs) enhances device performance. But there is a lack of studies that correlate this approach’s optical and structural quality, so the mechanisms by which this improvement is achieved remain unclear. One critical issue in increasing the performance of InAs/GaSb T2SLs arises from the lattice mismatch between InAs and GaSb, leading to interfacial strain in the structure. Not only that but also, since each side of the InAs/GaSb heterosystem does not have common atoms, there is a possibility of atomic intermixing at the IFs. To address such issues, an intentional InSb interfacial layer is commonly introduced at the InAs-on-GaSb and GaSb-on-InAs IFs to compensate for the strain and the chemical mismatches. In this report, we investigate InAs/GaSb T2SLs with (Sample A) and without (Sample B) InSb IF layers emitting in the mid-wavelength infrared (MWIR) through photoluminescence (PL) and band structure simulations. The PL studies indicate that the maximum PL intensity of Sample A is 1.6 times stronger than that of Sample B. This could be attributed to the effect of migration-enhanced epitaxy (MEE) growth mode. Band structure simulations understand the impact of atomic intermixing and segregation at T2SL IFs on the bandgap energy and PL intensity. It is observed that atomic intermixing at the IFs changes the bandgap energy and significantly affects the wave function overlap and the optical property of the samples. Transmission electron microscopy (TEM) measurements reveal that the T2SL IFs in Sample A are very rough compared to sharp IFs in Sample B, indicating a high possibility of atomic intermixing and segregation. Based on these results, it is believed that high-quality heterostructure could be achieved by controlling the IFs to enhance its structural and compositional homogeneities and the optical properties of the T2SLs.
PB ACS
SN 1944-8244
YR 2023
FD 2023-02-01
LK http://hdl.handle.net/10498/29600
UL http://hdl.handle.net/10498/29600
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 15-nov-2026