RT journal article
T1 Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon
A1 Piñero Charlo, José Carlos
A1 Araújo Gay, Daniel
A1 Enzo Pastore, Carlo
A1 Gutiérrez Peinado, Marina
A1 Frigeri, Cesare
A1 Benali, Ahmad
A1 Lelièvre, Jean François
A1 Gendry, M.
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Didáctica
K1 Nanowires
K1 Si/GaAs
K1 Strain relaxation
K1 TEM
AB tTo integrate materials with large lattice mismatch as GaAs on silicon (Si) substrate, one possible approach,to improve the GaAs crystalline quality, is to use nanowires (NWs) technology. In the present contribution,NWs are grown on 111 oriented Si substrates by molecular beam epitaxy (MBE) using vapor-liquid-solid (VLS) method. Transmission electron microscopy (TEM) analyses show that NWs are mainly grownalternating wurtzite and zinc blend (ZB) phases, and only few are purely ZB. On the latter, High ResolutionElectron Microscopy (HREM) evidences the presence of twins near the surface of the NW showing limitedconcordance with the calculations of Yuan (2013) [1], where {111} twin planes in a 111 oriented GaAsNW attain attractive interactions mediated by surface strain. In addition, such twins allow slight strainrelaxation and are probably induced by the local huge elastic strain observed by HREM in the latticebetween the twin and the surface. The latter is attributed to some slight bending of the NW as shown bythe inversion of the strain from one side to the other side of the NW.
PB Elsevier
YR 2016
FD 2016-07-27
LK http://hdl.handle.net/10498/30251
UL http://hdl.handle.net/10498/30251
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 13-nov-2026