RT journal article
T1 Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS
A1 Cañas Fernández, Jesús
A1 Piñero Charlo, José Carlos
A1 Lloret Vieira, Fernando Manuel
A1 Gutiérrez Peinado, Marina
A1 Pham, Thu-Nhi
A1 Pernot, Julien
A1 Araújo Gay, Daniel
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Didáctica
A2 Física Aplicada
AB Alumina is a promising candidate for fabricating the gate of diamond metal oxide semiconductor field effect transistor (MOSFET) due to its outstanding nominal properties: A high gap of 8.8 eV and a high static dielectric constant of 9. However, such properties are strongly dependent on the synthesis. As gate oxides are usually very thin layers (5–50 nm), investigating its properties is not straightforward. Electron energy loss spectroscopy in scanning transmission electron microscopy (STEM-EELS) methodology is reported in the nm-scale range.Monochromatic 60 keV electron beam is used to obtain the low energy loss spectrum in order to allow anaccurate zero loss peak deconvolution and to avoid Cherenkov effect. The low energy loss spectrum is used to extract the bandgap along diamond-alumina interface and to perform Kramers-Kronig analysis to obtain the complex dielectric function of the Al2O3. High resolution electron microscopy (HREM) and STEM-EELS investigations show that the oxide phase of our sample is γ alumina. Its measured bandgap is 6.8 eV and the dielectric functions yield a value of 3 for the high frequency dielectric constant
PB Elsevier
SN 0169-4332
YR 2018
FD 2018-03-09
LK http://hdl.handle.net/10498/30437
UL http://hdl.handle.net/10498/30437
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 21-sep-2026