RT journal article
T1 High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM
A1 Piñero Charlo, José Carlos
A1 Lloret Vieira, Fernando Manuel
A1 Alegre Salguero, María de la Paz
A1 Villar Castro, María del Pilar
A1 Fiori, Alexandre
A1 Bustarret, Etienne
A1 Araújo Gay, Daniel
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Didáctica
A2 Física Aplicada
AB Ultimate spatial resolution in boron δ-doped homoepitaxial diamond interfaces has been achieved by diffraction contrast technique in Transmission Electron Microscopy. The combination of two reflections with the Howie-Whelan equations allows profiling the boron content of δ-doped diamond homoepitaxial layers by fitting experimentally measured CTEM intensities with the theoretical ones. To validate the method, the obtained doping profiles are compared with that of secondary ion mass spectrometry, obtaining a boron concentration of 1.6·1021 at/cm−3, which is in good agreement with that of SIMS. This approach is capable to perform dopant concentration quantification in a non-destructive way, and provides the possibility of nanometric resolution dopant concentration mapping by TEM
PB Elsevier
SN 0169-4332
YR 2018
FD 2018-12-15
LK http://hdl.handle.net/10498/30438
UL http://hdl.handle.net/10498/30438
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 11-nov-2026