RT journal article
T1 Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique
A1 Masante, Cedric
A1 De Vecchy, John
A1 Mazen, F
A1 Milesi, F
A1 Di cioccio, L
A1 Pernot, Julien
A1 Lloret Vieira, Fernando Manuel
A1 Araújo Gay, Daniel
A1 Piñero Charlo, José Carlos
A1 Rochat, N
A1 Pierre, F
A1 Servant, F
A1 Widiez, J
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Didáctica
A2 Física Aplicada
AB The effect of H+ implantation and annealing of diamond (100) monocrystalline substrates has been studied by ToF-SIMS, cathodoluminescence, transmission spectroscopy and TEM. Blistering conditions suitable for the Smart Cut™ technology have been identified in monocrystalline diamond, using two sets of hydrogen implantation and annealing. A first hydrogen implantation followed by a first annealing leads to amorphization of a buried layer without hydrogen exodiffusion. Blisters and exfoliations appear at the surface of the diamond samples, after a second hydrogen implantation inside the pre-amorphized diamond layer and a final annealing, as evidenced by TEM and optical microscopy. Demonstration of hydrogen-induced blistering is a major step to adapt the Smart Cut™ process on diamond material. This process is compatible with wafer bonding before the second annealing and therefore open the way for thin diamond layer transfer on a bonded receiver wafer, still not achieved to date.
PB Elsevier
SN 0925-9635
YR 2022
FD 2022
LK http://hdl.handle.net/10498/30471
UL http://hdl.handle.net/10498/30471
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 13-nov-2026