RT journal article
T1 Effect of substrate roughness on the nucleation and growth behaviour of microwave plasma enhanced CVD diamond films – a case study
A1 Mallik, Awadesh Kumar
A1 Rouzbahani, Rozita
A1 Lloret Vieira, Fernando Manuel
A1 Mary Joy, Rani
A1 Haenen, Ken
A2 Física Aplicada
AB The influence of substrate surface roughness on the nucleation and growth of diamond films by chemical vapour deposition (CVD) is investigated. Silicon substrates were grinded with six different grit sizes of abrasive papers with a rotating wheel. Si was also etched by Ar+ ions to produce average surface roughness Ra = 11.29 nm on the mirror polished side (Ra = 1.17 nm). A comparison of the results of the effect of substrate roughness, on the growth behaviour of nanocrystalline diamond (NCD) films, by using both the resonant cavity and the linear antenna CVD systems, are presented here. Scanning electron microscopy (SEM) images and Raman spectroscopy reveal that under both the linear antenna and the resonant cavity microwave plasma CVD conditions, grown films are NCD. The diamond nanocrystals sizes vary from 80 to 180 nm, grown by both the reactors after few hours of deposition, irrespective of the substrate roughness, whereas their quality (defined by the relative percentage ratios of the Raman sp3 peak intensity to the non-sp3 peak intensity) varies from 33% to 45%, depending on the substrate surface roughness. Such nanocrystals grew into plate-like flat 1–6 μm size diamond grains after prolonged hours (64–69 h) of CVD growth. It is found specifically that the roughness created by the argon plasma treatment of the silicon substrate surfaces effectively enhances the nucleation and growth behaviour of the diamond films.
PB Taylor & Francis
SN 2694-1120
YR 2023
FD 2023
LK http://hdl.handle.net/10498/30492
UL http://hdl.handle.net/10498/30492
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 13-nov-2026