RT journal article
T1 Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices
A1 Lloret Vieira, Fernando Manuel
A1 Fiori, Alexandre
A1 Araújo Gay, Daniel
A1 Eon, David
A1 Villar Castro, María del Pilar
A1 Bustarret, Etienne
A2 Física Aplicada
AB The selective doped overgrowth of 3D mesa patterns and trenches has become an essential fabrication step of advanced monolithic diamond-based power devices. The methodology here proposed combines the overgrowth of plasma-etched cylindrical mesa structures with the sequential growth of doping superlattices. The latter involve thin heavily boron doped epilayers separating thicker undoped epilayers in a periodic fashion. Besides the classical shape analysis under the scanning electron microscope relying on the appearance of facets corresponding to the main crystallographic directions and their evolution toward slow growing facets, the doping superlattices were used as markers in oriented cross-sectional lamellas prepared by focused ion beam and observed by transmission electron microscopy. This stratigraphic approach is shown here to be applicable to overgrown structures where faceting was not detectable. Intermediate growth directions were detected at different times of the growth process and the periodicity of the superlattice allowed to calculate the growth rates and parameters, providing an original insight into the planarization mechanism. Different configurations of the growth front were obtained for different sample orientations, illustrating the anisotropy of the 3D growth. Dislocations were also observed along the lateral growth fronts with two types of Burger vector: b 01 1  = 1 2 [01 1 ] and b 112 = 1 6 [112]. Moreover, the clustering of these extended defects in specific regions of the overgrowth prompted a proposal of two different dislocation generation mechanisms.
SN 0003-6951
YR 2016
FD 2016
LK http://hdl.handle.net/10498/30524
UL http://hdl.handle.net/10498/30524
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 13-nov-2026