RT journal article
T1 Diamond/γ-alumina band offset determination by XPS
A1 Cañas, Jesus
A1 Alba Muñoz, Gonzalo
A1 Leinen, Dietmar
A1 Lloret Vieira, Fernando Manuel
A1 Gutiérrez Peinado, Marina
A1 Eon, David
A1 Pernot, Julien
A1 Gheeraert, Etienne
A1 Araújo Gay, Daniel
A2 Física Aplicada
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
AB γ-Alumina is a promising candidate for fabricating the gate of the diamond metal oxide semiconductor field effect transistor based on oxygen termination due to its high bandgap of 6.7 eV and high static dielectric constant of 9. Besides these properties, having a sufficient barrier for holes is mandatory to avoid carriers leakage through the gate. However, the band offset of the diamond/alumina heterojunction can be affected by the alumina crystallinity and interface bonds, which depend on multiple factors such as deposition and annealing temperature or diamond surface treatment prior to deposition. In this work, the heterojunction of atomic layer deposited alumina and (1 0 0) p-diamond is studied using X-ray photoelectron spectroscopy (XPS). Transmission electron microscopy studies reveal that the deposited alumina layer is 35 nm thick and present the gamma phase. The valence band offset between diamond and γ-alumina is evaluated on a single sample with a new methodology based on an ion etching XPS depth profile. The obtained value for the valence band offset of diamond and γ-alumina is 3.4 eV.
SN 0169-4332
YR 2021
FD 2021
LK http://hdl.handle.net/10498/30525
UL http://hdl.handle.net/10498/30525
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 22-sep-2026