RT journal article
T1 Si NWs conversion to Si-SiC core-shell NWs by MBE
A1 Lloret Vieira, Fernando Manuel
A1 Araújo Gay, Daniel
A1 Villar Castro, María del Pilar
A1 Liu, Linsheng
A1 Zekentes, Konstantino
A2 Física Aplicada
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 SiC conversion
K1 SiC NWs
K1 MBE
K1 Temperature effect
K1 TEM
AB Si nanowires (NWs) have been converted to silicon-silicon carbide (Si-SiC) core-shellNWs at different conditions of substrate temperature in an ultra-high vacuum using a molecularbeam epitaxy (MBE) set-up. In-situ auger electron spectroscopy (AES) and reflection high-energyelectron diffraction (RHEED) allowed a control of the growth process. To evaluate structure andchemical modifications of their shape, scanning electron microscopy (SEM) and conventionaltransmission electron microscopy (TEM) is used. Evidence of Si-carburization is shown by electronenergy loss spectroscopy (EELS) and selected area electron diffraction (SAED) relatedinvestigation. Facet dependence of the carbon diffusion is shown with a maximum carburizationdepth of 20nm on the (331) and (131) facet of the NWs. Si-SiC core-shell NWs free of planardefects have been obtained for conversion temperatures lower than 800ºC.
PB Trans Tech Publications Ltd
SN 9783038354789
SN 1662-9752
YR 2015
FD 2015
LK http://hdl.handle.net/10498/30530
UL http://hdl.handle.net/10498/30530
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 13-nov-2026