RT journal article
T1 Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs
A1 Gutiérrez Peinado, Marina
A1 Lloret Vieira, Fernando Manuel
A1 Thanh-Toan, Pham
A1 Cañas, Jesus
A1 Fernández de los Reyes, Daniel
A1 Eon, David
A1 Pernot, Julien
A1 Araújo Gay, Daniel
A2 Física Aplicada
AB In contrast to Si technology, amorphous alumina cannot act as a barrier for a carrier at diamond MOSFET gates due to their comparable bandgap. Indeed, gate leaks are generally observed in diamond/alumina gates. A control of the alumina crystallinity and its lattice matching to diamond is here demonstrated to avoid such leaks. Transmission electron microscopy analysis shows that high temperature atomic layer deposition, followed by annealing, generates monocrystalline reconstruction of the gate layer with an optimum lattice orientation with respect to the underneath diamond lattice. Despite the generation of γ-alumina, such lattice control is shown to prohibit the carrier transfer at interfaces and across the oxide.
SN 2079-4991
YR 2018
FD 2018
LK http://hdl.handle.net/10498/30532
UL http://hdl.handle.net/10498/30532
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 12-nov-2026