RT journal article
T1 Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors
A1 Pham, Thanh-Toan
A1 Piñero Charlo, José Carlos
A1 Marechal, Aurelien
A1 Gutiérrez Peinado, Marina
A1 Lloret Vieira, Fernando Manuel
A1 Eon, David
A1 Gheeraert, Etienne
A1 Rouger, Nicolas
A1 Araújo Gay, Daniel
A1 Pernot, Julien
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Física Aplicada
AB In this paper, we introduce a set of experiments and analyses to comprehensively correlate the epitaxial structural defects and electrical characteristics in the pseudovertical homoepitaxial boron-doped oxygen-terminated (001) diamond metal-oxide-semiconductor capacitors (MOSCAPs). Current-voltage I(V), capacitance-voltage C(V), and capacitance-frequency C(f) characteristics of the MOSCAPs have been measured and analyzed, with the special focus when the structure is under positive bias, i.e., depletion regime. The defective spots, which are electrically active, have been identified as the origin of the MOSCAP's leakage current in depletion regime. The electrical features of these killer defects are characterized thanks to micrometer scale electrical measurements equipped under scanning electron microscope. The structural features of these killer defects are explored by transmission electron microscopy. By taking into account, the electrical characteristics of the killer defects, we introduced and simulated a small signal equivalent circuit of the whole structure. The comparison between simulations with ac measurements confirms that the gate leakage current appearing in depletion regime induces an inversionlike artifact observed on diamond MOSCAPs C(f, V).
SN 0018-9383
YR 2018
FD 2018
LK http://hdl.handle.net/10498/30534
UL http://hdl.handle.net/10498/30534
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 22-sep-2026