RT journal article
T1 Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study
A1 Piñero Charlo, José Carlos
A1 de Vecchy, John
A1 Fernández de los Reyes, Daniel
A1 Alba Muñoz, Gonzalo
A1 Widiez, J
A1 Di Cioccio, L
A1 Lloret Vieira, Fernando Manuel
A1 Araújo Gay, Daniel
A1 Pernot, Julien
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Física Aplicada
AB An alternative route for the development of diamond-based technologies is the Smart-Cut process. Such a process could make possible the combination of diamond and silicon technologies, as well as building alternative structures or manufacturing large diamond wafers. However, crystalline quality and implantation-related damages may alter the electronic properties of the diamond wafer. In fact, this is a critical bottleneck that needs to be analysed in order to develop a reliable diamond/Smart-Cut based technology. In this contribution, we present STEM-based experiments used to evaluate various key parameters such as the sharpness of the transition regions, the behaviour of the implanted region and diamond lattice performance in Smart-Cut processes. Indeed, an outstanding sp2/sp3 relation close to ideality (it is, that of undamaged diamond) is evidenced in the diamond-transfer region.
YR 2020
FD 2020
LK http://hdl.handle.net/10498/30536
UL http://hdl.handle.net/10498/30536
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 13-nov-2026