RT journal article
T1 Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM
A1 Lloret Vieira, Fernando Manuel
A1 Araújo Gay, Daniel
A1 Villar Castro, María del Pilar
A1 Rodriguez Madrid, Juan Gabriel
A1 Iriarte, Gonzalo F
A1 Williams, Oliver Aneurin
A1 Calle, Fernando
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
A2 Física Aplicada
K1 SAW filter
K1 Diamond
K1 AlN piezoelectric
K1 TEM
K1 NCD
K1 High frequency resonator
AB Due to its mechanical properties, diamond is very attractive as an active material for the fabrication of SAW resonators for high frequency applications. In this work, the synthesis of piezoelectric AlN films by reactive sputtering at room temperature has been optimized on thick diamond layers grown on Si and alumina substrates in order to process high frequency devices. The effect of diamond underlayer microstructure is evaluated by TEM. Two sets of samples are studied, AlN/NCD/Alumina and AlN/MCD/Si. The orientation of the AlN grains is shown to improve with the film thickness and the diamond grain size. For NCD underlayer, the AlN deposited on top is more oriented. Moreover, above 1 μm from the AlN/diamond interface, a high degree of the c-axis orientation (perpendicular to the AlN/diamond interface) is demonstrated even though two different grain lattice orientations are shown to coexist: one with the (21̄1̄0) planes remaining parallel to the TEM-preparation lamella and the other with (011̄0) planes. The AlN/diamond interface is smooth down to the nm-scale.
SN 0167-9317
YR 2013
FD 2013
LK http://hdl.handle.net/10498/30537
UL http://hdl.handle.net/10498/30537
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 11-nov-2026