RT journal article
T1 Diamond as substrate for 3C-SiC growth: A TEM study
A1 Lloret Vieira, Fernando Manuel
A1 Piñero Charlo, José Carlos
A1 Villar Castro, María del Pilar
A1 Gheeraert, Etienne
A1 Vo-Ha, A.
A1 Soulière, Veronique
A1 Rebaud, M
A1 Carole, Davy
A1 Ferro, Gabriel
A2 Física Aplicada
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 diamond
K1 heteroepitaxy
K1 SiC
K1 TEM
K1 VLS
AB Vapor–liquid–solid (V–L–S) growth of SiC on (100) diamond substrate is reported. The crystalline quality is evaluated by transmission electron microscopy (TEM). Diffraction contrast (CTEM) observations allowed confirming the growth of fully lattice relaxed SiC 3C-type crystalline structure. Defects as dislocations at the diamond/SiC interface and stacking faults, in the thick SiC layer are revealed by high resolution TEM and CTEM. From the invisibility criteria, using dark field observations, 〈110〉 type Burger vector are identified.
SN 1862-6300
YR 2014
FD 2014
LK http://hdl.handle.net/10498/30538
UL http://hdl.handle.net/10498/30538
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 13-nov-2026