RT journal article
T1 Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models
A1 Palomo, F.R.
A1 Fernandez Martínez, P.
A1 Mogollón, J.M.
A1 Hidalgo, S.
A1 Aguirre, M.A.
A1 Flores, D.
A1 López Calle, Isabel
A1 Agapito, J. A.
A2 Ingeniería en AutomáticaElectrónica, Arquitectura y Redes de Computadores
K1 TCAD Sentaurus
K1 mixed-mode simulation
K1 3D simulation
K1 single event effect
K1 heavy ion
K1 femtosecond pulsed laser
AB Pulsed laser illumination constitutes an excellent tool to emulate the effects produced by the impact ofhighly energetic particles on electronic circuits. Numerical simulation techniques could be used to studythese effects and to establish accurate relationships between the laser parameters and the particlecharacteristics. Unfortunately, although particle incidence can be accurately simulated, up to now, therenot exist a simulation technique able to reproduce completely the effects in electronics produced by afemtosecond pulsed laser. In this paper, we explore the Synopsys Sentaurus TCAD ability to simulate theeffects of pulsed laser illumination. Theoretical study of the physics of the laser–semiconductor interactionsleads us to design a new simulation tool. Modifying the heavy ion generation rate included in SentaurusTCAD, we can take into account all the theoretical predicted characteristics of femtosecond laserillumination, and reproduce the single event effects (SEE) found in experimental tests
PB WILEY
SN 0894-3370
YR 2010
FD 2010-01
LK http://hdl.handle.net/10498/30790
UL http://hdl.handle.net/10498/30790
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 10-may-2026