RT journal article
T1 Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures
A1 Fernández de los Reyes, Daniel
A1 Bastiman, Faebian
A1 Hunter, Chris J.
A1 Sales Lérida, David
A1 Sánchez, Ana M.
A1 John P.R., David
A1 González Robledo, David
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 Bi composition
K1 GaAsBi/GaAs epilayers
K1 Molecular beam epitaxy
AB The structure and composition of single GaAsBi/GaAs epilayers grown by molecular beam epitaxy were investigated by optical and transmission electron microscopy techniques. Firstly, the GaAsBi layers exhibit two distinct regions and a varying Bi composition profile in the growth direction. In the lower (25 nm) region, the Bi content decays exponentially from an initial maximum value, while the upper region comprises an almost constant Bi content until the end of the layer. Secondly, despite the relatively low Bi content, CuPtB-type ordering was observed both in electron diffraction patterns and in fast Fourier transform reconstructions from high-resolution transmission electron microscopy images. The estimation of the long-range ordering parameter and the development of ordering maps by using geometrical phase algorithms indicate a direct connection between the solubility of Bi and the amount of ordering. The occurrence of both phase separation and atomic ordering has a significant effect on the optical properties of these layers. © 2014 Reyes et al.; licensee Springer.
PB SPRINGER
SN 19317573
YR 2014
FD 2014
LK http://hdl.handle.net/10498/30805
UL http://hdl.handle.net/10498/30805
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 07-nov-2026