RT journal article
T1 High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
A1 Ulloa, J. M.
A1 LLorens, J.M.
A1 Alén, B.
A1 Fernández de los Reyes, Daniel
A1 Sales Lérida, David
A1 González Robledo, David
A1 Hierro, A.
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 Indium arsenide
K1 Luminescence
K1 Rapid thermal annealing
K1 Semiconductor quantum dots
AB The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition.
SN 00036951
YR 2012
FD 2012
LK http://hdl.handle.net/10498/30806
UL http://hdl.handle.net/10498/30806
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 08-nov-2026