RT journal article
T1 Formation of tetragonal InBi clusters in InAsBi/InAs(100) heterostructures grown by molecular beam epitaxy
A1 Domínguez, Lara
A1 Fernández de los Reyes, Daniel
A1 Bastiman, Faebian
A1 Sales Lérida, David
A1 Richards, R. D.
A1 Mendes, D.
A1 David, John P. R.
A1 González Robledo, David
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
AB This work analyses the Bi incorporation in InAs1?xBix/InAs(100) epilayers grown by MBE through advanced transmission electron microscopy techniques. Samples grown from 350–400 ?C resulted in Bi contents <3:3% exhibiting compositional variation in the growth direction. In contrast, roughly spherical clusters appeared in the sample grown at lower temperatures. The clusters are made up of the binary InBi with a tetragonal PbO phase surrounded by a matrix of InAs0:95Bi0:05 indicating the Bi solubility limit in InAs. These InBi crystals underwent a cubic distortion and are tilted 55? with regard to the InAsBi matrix. The crystallographic relationships are analysed in detail.
SN 18820786
YR 2013
FD 2013
LK http://hdl.handle.net/10498/30845
UL http://hdl.handle.net/10498/30845
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 08-nov-2026