RT journal article
T1 Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
A1 Ulloa, J.M.
A1 Fernández de los Reyes, Daniel
A1 Montes, M.
A1 Yamamoto, K.
A1 Sales Lérida, David
A1 González Robledo, David
A1 Guzman, A.
A1 Hierro, A.
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
AB The possibility of an independent tuning of the electron and hole confinement in InAs/GaAs quantum dots (QDs) by using a thin GaAsSbN capping layer (CL) is studied. By controlling the Sb and N contents in the quaternary alloy, the band structure of the QDs can be broadly tuned and converted from type-II in the valence band (high Sb contents) to type-I and to type-II in the conduction band (high N contents). Nevertheless, the simultaneous presence of Sb and N is found to induce strain and composition inhomogeneities in the CL and to degrade the photoluminescence of the structure.
PB American Institute of Physics
SN 00036951
YR 2012
FD 2012
LK http://hdl.handle.net/10498/30858
UL http://hdl.handle.net/10498/30858
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 13-nov-2026