RT journal article
T1 Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies
A1 Flores Gallegos, Sara
A1 Fernández de los Reyes, Daniel
A1 Braza Blanco, María Verónica
A1 Richards, R. D.
A1 Bastiman, F.
A1 Ben Fernández, Teresa
A1 Ruiz Martín, Nazaret
A1 David, John P. R.
A1 González Robledo, David
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 Bismuthide
K1 Exchange energies
K1 InAsBi
K1 Segregation
AB InAsBi dilute alloys are potential new candidates for the improvement of infrared optoelectronic devices such as photodetectors or lasers. In this work, InAsBi/InAs superlattices (SLs)with Bi contents ranging between 1 and 3% were grown by molecular beam epitaxy with different Bi fluxes and growth temperatures to analyze Bi segregation by cross sectional transmission electron microscopy techniques. Bi segregation profiles have been described layer-by-layer using a three-layer fluid exchange mechanism, extracting the values of the As/Bi exchange energies (E1, 1.26 ± 0.01 eV and E2, 1.36 ± 0.02 eV). A relationship to calculate the activation energies for exchange from the binding energies in III–V alloys is proposed, which would allow predicting them for other hitherto unknown compounds.
PB Elsevier
SN 01694332
YR 2019
FD 2019
LK http://hdl.handle.net/10498/30881
UL http://hdl.handle.net/10498/30881
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 22-sep-2026