RT journal article
T1 Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications
A1 Braza Blanco, María Verónica
A1 Fernández de los Reyes, Daniel
A1 Gonzalo, A.
A1 Utrilla, A.D.
A1 Ben Fernández, Teresa
A1 Ulloa, J.M.
A1 González Robledo, David
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 Dilute nitride semiconductor
K1 GaAsSbN
K1 Structural and optical characterization
AB As promising candidates for solar cell and photodetection applications in the range 1.0–1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the molecular beam epitaxy reactor to analyse the impact of temperature on the incorporation of Sb and N species according to the wafer radial composition gradients. The results from the combination of X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopies (EDS) show an opposite rate of incorporation between N and Sb as we move away from the centre of the wafer. A competitive behaviour between Sb and N in order to occupy the group-V position is observed that depends on the growth rate and the substrate temperature. The optical properties obtained by photoluminescence are discussed in the frame of the double-band anticrossing model. The growth conditions define two sets of different parameters for the energy level and the coupling interaction potential of N, which must be taken into account in the search for the optimum compositions 1–1.15-eV photonic applications.
PB SPRINGER
SN 19317573
YR 2017
FD 2017
LK http://hdl.handle.net/10498/30912
UL http://hdl.handle.net/10498/30912
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 13-nov-2026