RT journal article
T1 High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors
A1 Cañas Fernández, Jesús
A1 Dussarrat, Christian
A1 Teramoto, Takashi
A1 Masante, Cedric
A1 Gutiérrez Peinado, Marina
A1 Gheeraert, Etienne
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
AB Metal oxide semiconductor (MOS) capacitors were fabricated based on oxygen-terminated p-type (100) oriented diamond and SiO2 grown by atomic layer deposition. A detailed electrical characterization consisting of I-V, C-V, and C-F was performed in order to analyze the electrical properties of the structure. The MOS capacitor presented no detectable leakage current in forward and very low leakage current in reverse sustaining at least 6 MV/cm without degradation. The C-V measurements showed depletion and deep depletion regimes in forward and accumulation regimes in reverse, with a low density of interface states of ∼ 10 11 cm - 2 along the diamond bandgap. The latter results were further validated by conductance and capacitance vs frequency measurements
PB AIP Publishing
SN 0003-6951
YR 2022
FD 2022
LK http://hdl.handle.net/10498/31008
UL http://hdl.handle.net/10498/31008
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 22-sep-2026