RT journal article
T1 High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication
A1 Pham, T. T.
A1 Gutiérrez Peinado, Marina
A1 Masante, C.
A1 Rouger, N.
A1 Eon, D.
A1 Gheeraert, Etienne
A1 Araújo Gay, Daniel
A1 Pernot, Julien
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
AB In this letter, we report on the improvement of gate controlled Al2O3/(100) boron doped (B-doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors using 40 nm thick Al2O3 deposited by Atomic Layer Deposition at 380 °C and then annealed at 500 °C in vacuum conditions. The high quality of Al2O3 and an Al2O3/diamond interface is verified thanks to electrical measurements and Transmission Electron Microscopy (TEM) measurements. A density of interface states lower than 1012 eV-1 cm-2 is measured from the flat-band regime to the depletion regime. The shift of the flat-band voltage and the leakage current through the oxide are significantly reduced in good agreement with the mono-crystalline character of the Al2O3 layer revealed by TEM
PB AIP Publishing
SN 00036951
YR 2018
FD 2018
LK http://hdl.handle.net/10498/31011
UL http://hdl.handle.net/10498/31011
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 22-sep-2026