RT journal article
T1 H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS
A1 Alba, Gonzalo
A1 Eon, David
A1 Villar Castro, María del Pilar
A1 Alcántara Puerto, Rodrigo
A1 Chicot, Gauthier
A1 Cañas Fernández, Jesús
A1 Letellier, Juliette
A1 Pernot, Julien
A1 Araújo Gay, Daniel
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 H-terminated diamond
K1 Surface conductive layer
K1 Surface band bending
K1 Angle-resolved X-ray photoelectron spectroscopy
AB Concerning diamond-based electronic devices, the H-terminated diamond surface is one of the most used terminations as it can be obtained directly by using H2 plasma, which also is a key step for diamond growth by chemical vapour deposition (CVD). The resultant surfaces present a p-type surface conductive layer with interest in power electronic applications. However, the mechanism for this behavior is still under discussion. Upward band bending due to surface transfer doping is the most accepted model, but has not been experimentally probed as of yet. Recently, a downward band bending very near the surface due to shallow acceptors has been proposed to coexist with surface transfer doping, explaining most of the observed phenomena. In this work, a new approach to the measurement of band bending by angle-resolved X-ray photoelectron spectroscopy (ARXPS) is proposed. Based on this new interpretation, a downward band bending of 0.67 eV extended over 0.5 nm was evidenced on a (100) H-terminated diamond surface.
YR 2020
FD 2020
LK http://hdl.handle.net/10498/31082
UL http://hdl.handle.net/10498/31082
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 21-sep-2026