RT journal article
T1 Modification of the van derWaals interaction at the Bi2Te3 and Ge(111) interface
A1 Nawa, Kenji
A1 Kepaptsoglou, Demie
A1 Ghasemi, Arsham
A1 Hasnip, Philip
A1 Barcena González, Guillermo
A1 Nicotra, Giuseppe
A1 Galindo Riaño, Pedro Luis
A1 Ramasse, Quentin M.
A1 Nakamura, Kohji
A1 Speller, Susannah C.
A1 Kuerbanjiang, Balati
A1 Hesjedal, Thorsten
A1 Lazarov, Vlado K.
A2 Ingeniería Informática
AB We present a structural and density-functional theory study of the interface of the quasi-twin-free grown three-dimensional topological insulator Bi2Te3 on Ge(111). Aberration-corrected scanning transmission electron microscopy and electron energy-loss spectroscopy in combination with first-principles calculations show that the weak van der Waals adhesion between the Bi2Te3 quintuple layer and Ge can be overcome by forming an additional Te layer at their interface. The first-principles calculations of the formation energy of the additional Te layer show it to be energetically favorable as a result of the strong hybridization between the Te and Ge.
SN 2475-9953
YR 2021
FD 2021-02-12
LK http://hdl.handle.net/10498/32001
UL http://hdl.handle.net/10498/32001
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 11-nov-2026