RT journal article
T1 Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing
A1 Shiffa, Mustaqeem
A1 Dewes, Benjamin T.
A1 Bradford, Jonathan
A1 Cottam, Nathan D.
A1 Cheng, Tin S.
A1 Mellor, Christopher J.
A1 Makarovskiy, Oleg
A1 Rahman, Kazi
A1 O'Shea, James N.
A1 Beton, Peter H.
A1 Novikov, Sergei V.
A1 Ben Fernández, Teresa
A1 González Robledo, David
A1 Xie, Jiahao
A1 Zhang, Lijun
A1 Patanè, Amalia
A2 Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
K1 gallium selenide
K1 molecular beam epitaxy
K1 optoelectronics
K1 photodetectors
AB 2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top-down approaches to their fabrication, such as exfoliation of bulk crystals by “scotch-tape,” are widely used, but have limited prospects for precise engineering of functionalities and scalability. Here, a bottom-up technique based on epitaxy is used to demonstrate high-quality, wafer-scale 2SEM based on the wide band gap gallium selenide (GaSe) compound. GaSe layers of well-defined thickness are developed using a bespoke facility for the epitaxial growth and in situ studies of 2SEM. The dominant centrosymmetry and stacking of the individual van der Waals layers are verified by theory and experiment; their optical anisotropy and resonant absorption in the UV spectrum are exploited for photon sensing in the technological UV-C spectral range, offering a scalable route to deep-UV optoelectronics.
PB John Wiley and Sons Inc
SN 1613-6829
YR 2024
FD 2024
LK http://hdl.handle.net/10498/32125
UL http://hdl.handle.net/10498/32125
LA eng
DS Repositorio Institucional de la Universidad de Cádiz
RD 13-nov-2026